Major Taiwanese Memory Manufacturer Selects Nikon Powerchip Orders Immersion Scanner from Nikon for Next-Generation Memory Line

Nikon Corporation (President: Michio Kariya) announced its NSR-S610C ArF immersion scanner has been selected by Powerchip Semiconductor Corporation as the leading edge tool for its 50 nm NAND flash process. The tool will be installed in Powerchip's fab in Hsinchu, Taiwan. This system was selected over the competition because of Nikon's proven ability to print immersion exposures with no immersion-induced defects and overlay accuracy equivalent to or better than dry systems.

"We are pleased that Powerchip selected us as their supplier for immersion lithography technology," said Kazuo Ushida, President of Nikon's Precision Equipment Company. "This continues our strong, existing relationship with Powerchip for both leading edge tools and non-critical layer lithography."

The NSR-S610C builds on the immersion technology developed for the NSR-609B, the world's first production immersion tool, shipped in January of 2006. Nikon's proprietary Local Fill Technology is proven to eliminate scanner-induced immersion defects with no bubbles, water spots, or backside wafer contamination. This technology also eliminates evaporation of the immersion fluid, providing a critical advantage in preventing immersion related overlay problems. Nikon's Tandem Stage utilizes two stages with different functions to increase throughput, improve accuracy, and enhance long term stability. The NSR-610C, with its catadioptric optics of NA 1.3, is the world first immersion scanner capable of 45 nm half-pitch volume production.